FACILITATING FABRICATING GATE-ALL-AROUND NANOWIRE FIELD-EFFECT TRANSISTORS

摘要

Methods are presented for facilitating fabrication of a semiconductor device, such as a gate-all-around nanowire field-effect transistor. The methods include, for instance: providing at least one stack structure including at least one layer or bump extending above the substrate structure; selectively oxidizing at least a portion of the at least one stack structure to form at least one nanowire extending within the stack structure(s) surrounded by oxidized material of the stack structure(s); and removing the oxidized material from the stack structure(s), exposing the nanowire(s). This selectively oxidizing may include oxidizing an upper portion of the substrate structure, such as an upper portion of one or more fins supporting the stack structure(s) to facilitate full 360° exposure of the nanowire(s). In one embodiment, the stack structure includes one or more diamond-shaped bumps or ridges.

主权项

1. A method comprising:
facilitating fabrication of a semiconductor device comprising at least one nanowire, the facilitating comprising:
providing at least one stack structure comprising at least one layer or bump extending above a substrate structure;selectively oxidizing at least a portion of the at least one stack structure to form at least one nanowire extending therein surrounded by oxidized material of the at least one stack structure; andremoving the oxidized material from the at least one stack structure, exposing the at least one nanowire.