发明名称 |
MAGNETIC RANDOM ACCESS MEMORY HAVING PERPENDICULAR ENHANCEMENT LAYER AND THIN REFERENCE LAYER |
摘要 |
The present invention is directed to a spin transfer torque (STT) MRAM device having a perpendicular magnetic tunnel junction (MTJ) memory element. The memory element includes a perpendicular MTJ structure in between a non-magnetic seed layer and a non-magnetic cap layer. The MTJ structure comprises a magnetic free layer structure and a magnetic reference layer structure with an insulating tunnel junction layer interposed therebetween, an anti-ferromagnetic coupling layer formed adjacent to the magnetic reference layer structure, and a magnetic fixed layer formed adjacent to the anti-ferromagnetic coupling layer. At least one of the magnetic free and reference layer structures includes a non-magnetic perpendicular enhancement layer, which improves the perpendicular anisotropy of magnetic layers adjacent thereto. |
申请公布号 |
US2015102441(A1) |
申请公布日期 |
2015.04.16 |
申请号 |
US201414255884 |
申请日期 |
2014.04.17 |
申请人 |
Avalanche Technology, Inc. |
发明人 |
Gan Huadong;Zhou Yuchen;Huai Yiming;Wang Zihui;Wang Xiaobin |
分类号 |
H01L43/02;H01L43/10;H01L27/22 |
主分类号 |
H01L43/02 |
代理机构 |
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代理人 |
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主权项 |
1. A magnetic random access memory device comprising a plurality of magnetic tunnel junction (MTJ) memory elements, each of said memory elements comprising:
a magnetic reference layer structure including a first and a second magnetic reference layers with a tantalum perpendicular enhancement layer interposed therebetween, said first magnetic reference layer comprising cobalt, iron, and boron, said first and said second magnetic reference layers having a first fixed magnetization direction substantially perpendicular to layer planes thereof; and an insulating tunnel junction layer formed adjacent to said first magnetic reference layer opposite said tantalum perpendicular enhancement layer. |
地址 |
Fremont CA US |