发明名称 Electro-optical device and electronic apparatus
摘要 Provided is an electro-optical device including: a first conduction layer; and a second conduction layer which is disposed on the upper layer side of the first conduction layer with an insulation film interposed therebetween so that at least a part thereof overlaps with the first conduction layer in the plan view, wherein the insulation film is provided with a void portion formed in an area where the first conduction layer and the second conduction layer overlap with each other in the plan view.
申请公布号 US9007540(B2) 申请公布日期 2015.04.14
申请号 US201012974758 申请日期 2010.12.21
申请人 Seiko Epson Corporation 发明人 Nakagawa Masashi
分类号 G02F1/1343;G02F1/1333;G02F1/1362 主分类号 G02F1/1343
代理机构 Lowe Hauptman & Ham, LLP 代理人 Lowe Hauptman & Ham, LLP
主权项 1. An electro-optical device comprising: a transistor; a first insulation film that is disposed so as to cover the transistor; a first conduction layer that is disposed so as to oppose to the transistor via the first insulation film; a second conduction layer that overlaps with the first conduction layer at an overlapping area seen from a direction from the second conduction layer to the first conduction layer; and a second insulation film that is disposed between the first conduction layer and the second conduction layer, the second insulation film having a void at the overlapping area, the void being included in the overlapping area seen from a direction from the second conduction layer to the first conduction layer, wherein the first conduction layer includes a signal line, an image signal being supplied to the signal line, and the second conduction layer including a fixed potential side electrode of a capacitance element.
地址 Tokyo JP