发明名称 |
Electro-optical device and electronic apparatus |
摘要 |
Provided is an electro-optical device including: a first conduction layer; and a second conduction layer which is disposed on the upper layer side of the first conduction layer with an insulation film interposed therebetween so that at least a part thereof overlaps with the first conduction layer in the plan view, wherein the insulation film is provided with a void portion formed in an area where the first conduction layer and the second conduction layer overlap with each other in the plan view. |
申请公布号 |
US9007540(B2) |
申请公布日期 |
2015.04.14 |
申请号 |
US201012974758 |
申请日期 |
2010.12.21 |
申请人 |
Seiko Epson Corporation |
发明人 |
Nakagawa Masashi |
分类号 |
G02F1/1343;G02F1/1333;G02F1/1362 |
主分类号 |
G02F1/1343 |
代理机构 |
Lowe Hauptman & Ham, LLP |
代理人 |
Lowe Hauptman & Ham, LLP |
主权项 |
1. An electro-optical device comprising:
a transistor; a first insulation film that is disposed so as to cover the transistor; a first conduction layer that is disposed so as to oppose to the transistor via the first insulation film; a second conduction layer that overlaps with the first conduction layer at an overlapping area seen from a direction from the second conduction layer to the first conduction layer; and a second insulation film that is disposed between the first conduction layer and the second conduction layer, the second insulation film having a void at the overlapping area, the void being included in the overlapping area seen from a direction from the second conduction layer to the first conduction layer, wherein the first conduction layer includes a signal line, an image signal being supplied to the signal line, and the second conduction layer including a fixed potential side electrode of a capacitance element. |
地址 |
Tokyo JP |