Insulated gate field effect transistor and method of manufacturing the same

摘要

An insulated gate field effect transistor configured to reduce the occurrence of a short-circuit fault, and a method of manufacturing the insulated gate field effect transistor are provided. A FET includes a semiconductor substrate, a gate insulator, a gate electrode, and a conductive member. The semiconductor substrate has an insulation groove that splits a channel region into a first channel region on a drain region side and a second channel region on a source region side. The conductive member is supported by a drain-side end face and a source-side end face of the insulation groove. When the temperature of the conductive member is equal to or higher than a predetermined temperature, the conductive member is cut.

主权项

1. An insulated gate field effect transistor comprising:
a semiconductor substrate having a drain region, a source region, a channel region, and an insulation groove that splits the channel region into a first channel region located on the drain region side and a second channel region located on the source region side; a gate electrode having a first gate electrode portion that forms the first channel region in the semiconductor substrate, and a second gate electrode portion that forms the second channel region in the semiconductor substrate; a gate insulator that is located between the semiconductor substrate and the gate electrode and that insulates the gate electrode from the drain region and the source region; and a conductive member that is supported by a drain-side end face of the insulation groove, the drain-side end face being an end face on the drain region side, and a source-side end face of the insulation groove, the source-side end face being an end face on the source region side, and that is cut when a temperature of the conductive member is higher than or equal to a predetermined temperature.