High voltage polymer dielectric capacitor isolation device

摘要

An electronic isolation device is formed on a monolithic substrate and includes a plurality of passive isolation components. The isolation components are formed in three metal levels. The first metal level is separated from the monolithic substrate by an inorganic PMD layer. The second metal level is separated from the first metal level by a layer of silicon dioxide. The third metal level is separated from the second metal level by at least 20 microns of polyimide or PBO. The isolation components include bondpads on the third metal level for connections to other devices. A dielectric layer is formed over the third metal level, exposing the bondpads. The isolation device contains no transistors.

主权项

1. An isolation device, comprising:
a monolithic substrate; a pre-metal dielectric (PMD) layer disposed over said monolithic substrate, said PMD layer including silicon dioxide; a first metal level disposed over said PMD layer; a silicon dioxide layer disposed over said first metal layer; a second metal layer disposed over said silicon dioxide layer, said second metal level extending into lower via holes in said silicon dioxide layer to form lower vias which make electrical connections to said first metal level; a polymer dielectric layer disposed over said second metal level, said polymer dielectric layer comprising primarily a layer of polymer selected from the group consisting of polyimide and poly(p-phenylene-2,6-benzobisoxazole) (PBO), said polymer being at least 20 microns thick; a third metal level disposed over said polymer dielectric layer, said third metal level extending into upper via holes in said polymer dielectric layer to form upper vias which make electrical connections to said second metal level; bondpads disposed over said third metal level; and a dielectric overcoat dielectric layer disposed over said third metal level, said dielectric overcoat dielectric layer exposing said bondpads; said isolation device containing a plurality of isolation components, selected from the group consisting of a capacitor and a transformer, said isolation components being formed in at least said second metal level and said third metal level, said isolation device being free of transistors.