| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate processing apparatus which can form a film having high productivity and high quality.SOLUTION: A substrate processing apparatus for sequentially supplying on a surface of a substrate, at least two types of reaction gases which react with each other with the substrate being placed on a rotary table provided in a chamber to form a film containing a reaction product of reaction gases on the surface of the substrate comprises: first reaction gas supply means for supplying a first reaction gas to the surface of the substrate; second reaction gas supply means for supplying a second reaction gas to the surface of the substrate; and heating means for heating the substrate, in which the first reaction gas supply means, the heating means and the second reaction gas supply means are arranged in a rotational direction of the rotary table. |
