发明名称 REFERENCE VOLTAGE SOURCE BASED ON TRIPLE WIDTH OF SILICON INHIBITED ZONE
摘要 FIELD: electrical engineering.SUBSTANCE: reference voltage source comprises 1, 2and 3transistors. 3transistor collector is connected to adjustment element control input that makes the device output. Its feed input is connected with supply bus. Current source is connected in between supply bus and 3transistor collector. 1transistor collector is connected with first output of 1resistor, its second output being connected to 1transistor base. First output of 2resistor is connected to device output, as well as 4, 5and 6transistors.EFFECT: output voltage increased to the level complying with triple width of inhibited zone, higher stabilisation factor, stable output voltage.8 dwg
申请公布号 RU2546079(C1) 申请公布日期 2015.04.10
申请号 RU20140107267 申请日期 2014.02.25
申请人 FEDERAL'NOE GOSUDARSTVENNOE BJUDZHETNOE OBRAZOVATEL'NOE UCHREZHDENIE VYSSHEGO PROFESSIONAL'NOGO OBRAZOVANIJA "DONSKOJ GOSUDARSTVENNYJ TEKHNICHESKIJ UNIVERSITET" (DGTU) 发明人 STARCHENKO EVGENIJ IVANOVICH;BARILOV IVAN VASIL'EVICH;KLIMENKO MAKSIM VLADIMIROVICH;CHERNYSHOV DMITRIJ JUR'EVICH
分类号 G05F1/20 主分类号 G05F1/20
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