| 摘要 |
Provided is a semiconductor device capable of reducing junction capacitance and stabilizing the lateral side of a semiconductor layer at the same time. The semiconductor device (10) includes a collector contact layer (16) which is composed of a high concentration N-type semiconductor layer. An N-type collector layer (15), a base layer (14) which is laminated on the collector layer (15) and is a high concentration P-type semiconductor layer with an upper side (14a), and an N-type emitter layer which is laminated on a part of the upper side (14a) are laminated on the collector contact layer (16). A base-collector layer junction part (18) is formed on the junction side of the base layer (14) and the collector layer (15). An inactive part (19) is formed by implanting ions of one element selected from a group of helium and argon into a first semiconductor layer and a second semiconductor layer. The inactive part (19) is extended from the upper side (14a) to a position below the base-collector layer junction part (18). |
