| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device including an oxide semiconductor.SOLUTION: In a semiconductor device, an oxide semiconductor layer includes a first region overlapping with a source electrode, a second region overlapping with a drain electrode, and a third region overlapping with neither the source electrode nor the drain electrode. The film thickness of the oxide semiconductor layer in the third region is smaller than the film thickness of the oxide semiconductor layer in the first region and in the second region. One end of the oxide semiconductor layer in the third region includes a first tapered part. The other end of the oxide semiconductor layer in the third region includes a second tapered part. An end of the source electrode includes a third tapered part. An end of the drain electrode includes a fourth tapered part. The first tapered part and the third tapered part have continuous shapes, and the second tapered part and the fourth tapered part have continuous shapes. |
