发明名称 VACUUM DEPOSITION APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a vacuum deposition apparatus which can reduce a vapor deposition rate upon completion of vapor deposition as well as being able to calculate the vapor deposition rate more correctly and easily adjust an evaporation material to a predetermined pressure loss.SOLUTION: A vacuum deposition apparatus 1 which performs vacuum deposition on a substrate K under a reduced pressure includes: a crucible 2 which provides an evaporation material by evaporating a vapor deposition material M; a flow rate-adjusting valve 22 which adjusts a flow rate of the evaporation material; an introduction pipe 3 which introduces the evaporation material; a diffusion container 41 which introduces and diffuses the evaporation material of the introduction pipe 3; a discharge hole 42 which discharges the evaporation material inside the diffusion container 41 toward the substrate k; and a flow rate measurement mechanism 31 provided in the introduction pipe 3. The flow rate measurement mechanism 31 includes; a pressure loss valve 32 downstream the flow rate adjusting valve 22; two pressure sensors 33u and 33l which are provided upstream and downstream the pressure loss valve 32, respectively; and a controller 5 which adjusts the flow rate-adjusting valve 22 based on a pressure difference which is calculated from both pressures of the evaporation material measured with the pressure sensors 33u and 33l.
申请公布号 JP2015063724(A) 申请公布日期 2015.04.09
申请号 JP20130197643 申请日期 2013.09.25
申请人 HITACHI ZOSEN CORP 发明人 NISHIMURA TAKESHI;FUJIMOTO EIJI;DAIKU HIROYUKI
分类号 C23C14/24;C23C14/54;H01L51/50;H05B33/10 主分类号 C23C14/24
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