发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To reduce a resistance component caused by wiring, in a semiconductor device having a transistor.SOLUTION: Between a plurality of transistor units TRU, a source wiring wire SOI and a drain wiring wire DRI are alternately provided. One of bonding wires WIR1 is connected to the source wiring wire SOI1 at a plurality of points. The other one of the bonding wires WIR1 is connected to the source wiring wire SOI2 at a plurality of points. One of bonding wires WIR2 is connected to the drain wiring wire DRI1 at a plurality of points. The other one of the bonding wires WIR2 is connected to the drain wiring wire DRI2 at a plurality of points.
申请公布号 JP2015065213(A) 申请公布日期 2015.04.09
申请号 JP20130196874 申请日期 2013.09.24
申请人 RENESAS ELECTRONICS CORP 发明人 MIURA YOSHINAO;NAKAMURA TAKU;DANNO TADATOSHI
分类号 H01L21/338;H01L21/3205;H01L21/336;H01L21/337;H01L21/60;H01L21/768;H01L21/822;H01L23/522;H01L27/04;H01L27/098;H01L29/778;H01L29/78;H01L29/808;H01L29/812 主分类号 H01L21/338
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