| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device typified by a display device, which is compatible with large screen size and high definition, and which has good display quality and stably operates and has high reliability.SOLUTION: In a semiconductor device, by using a Cu-containing conductive layer for wiring of a long routing distance, increase in wiring resistance is minimized. Further, by avoiding the Cu-containing conductive layer from overlapping a semiconductor layer where a channel region of a TFT is formed and covering the Cu-containing conductive layer with an insulation layer containing silicon nitride, Cu diffusion can be prevented thereby to allow a highly reliable semiconductor device to be manufactured. Particularly, even though a display device as one embodiment of the semiconductor device grows in size or achieves high definition, the display device ensures good display quality and stable operation.</p> |
