| 摘要 |
An EPROM cell includes a semiconductor substrate, having source and drain regions, a floating gate, including a semiconductive polysilicon layer electrically interconnected with a first metal layer, and a control gate, including a second metal layer. The floating gate is disposed adjacent to the source and drain regions and separated from the semiconductor substrate by a first dielectric layer, and the second metal layer of the control gate is capacitively coupled to the first metal layer with a second dielectric layer therebetween. |
