| 摘要 |
<p>The present invention relates to a semiconductor memory device. The present invention includes: a pipe channel layer formed on a semiconductor substrate, first to third channel layers which are connected to the pipe channel layer, first conductive layers which surround the first channel layer and are stacked, second conductive layers which surround the second channel layer and are stacked, and third conductive layers which surround the third channel layer and are stacked. The first to the third conductive layers are respectively controlled.</p> |
