发明名称 両面で半導体ウェハを化学的に研削する方法
摘要 <p>A semiconductor wafer processed on both sides simultaneously, the wafer lying in freely movable fashion in a cutout in one of a plurality of carriers that rotate by means of a rolling apparatus, and one thereby being moved on a cycloidal trajectory, the semiconductor wafer being processed in material-removing fashion between two rotating ring-shaped working disks, wherein each working disk comprises a working layer comprising abrasive material, and wherein an alkaline medium comprising no abrasive material is supplied during the processing.</p>
申请公布号 JP5697368(B2) 申请公布日期 2015.04.08
申请号 JP20100137944 申请日期 2010.06.17
申请人 发明人
分类号 H01L21/304;B24B37/08 主分类号 H01L21/304
代理机构 代理人
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