Avalanche photodiodes and methods of fabricating the same

摘要

Provided are an avalanche photodiode and a method of fabricating the same. The method of fabricating the avalanche photodiode includes sequentially forming a compound semiconductor absorption layer, a compound semiconductor grading layer, a charge sheet layer, a compound semiconductor amplification layer, a selective wet etch layer, and a p-type conductive layer on an n-type substrate through a metal organic chemical vapor deposition process.

主权项

1. A method of fabricating an avalanche photodiode, comprising:
forming a compound semiconductor absorption layer, a compound semiconductor grading layer, a charge sheet layer, a compound semiconductor amplification layer, a selective wet etch layer, and a p-type conductive layer on an n-type substrate, wherein the compound semiconductor absorption layer, the compound semiconductor grading layer, the charge sheet layer, the compound semiconductor amplification layer, the selective wet etch layer, and the p-type conductive layer are sequentially formed on the n-type substrate through a metal organic chemical vapor deposition process; forming a p-type conductive mesa pattern by performing a plasma dry etch process on the p-type conductive layer; and forming an undercut region and a selective wet etch layer aperture pattern under the p-type conductive mesa pattern by performing a wet etch process on the selective wet etch layer by using the p-type conductive mesa pattern as an etch mask.