Light emitting device

摘要

Disclosed is a light emitting device. A light emitting device comprises a plurality of N-type semiconductor layers including a first N-type semiconductor layer and a second N-type semiconductor layer on the first N-type semiconductor layer, an active layer on the second N-type semiconductor layer, and a P-type semiconductor layer on the active layer, wherein the first N-type semiconductor layer comprises a Si doped Nitride layer and the second N-type semiconductor layer comprises a Si doped Nitride layer, and wherein the first and second N-type semiconductor layers have a Si impurity concentration different from each other.

主权项

1. A light emitting device comprising:
a substrate; at least two n-type semiconductor layers on the substrate, each of the at least two n-type semiconductor layers having a different Si concentration; a first n-type semiconductor layer on the at least two n-type semiconductor layers, the first n-type semiconductor layer having less Si concentration than 5×1018/cm3; an active layer directly on the first n-type semiconductor layer; a p-type semiconductor layer on the active layer; and an electrode on the p-type semiconductor layer.