| 主权项 |
1. A method for forming via holes in an etch layer disposed below a patterned organic mask with a plurality of patterned via holes, comprising:
treating the patterned organic mask, comprising:
flowing a treatment gas comprising H2;forming a plasma from the treatment gas;rounding the patterned via holes to form patterned rounded via holes by exposing the patterned via holes to the plasma; andstopping the flow of the treatment gas; and transferring the plurality of patterned rounded via holes into the etch layer, comprising:
opening features in a silicon containing mask layer below the patterned organic mask using the rounded via holes in the patterned organic mask, comprising:providing an opening gas with an etchant component and polymerizing component;forming the opening gas into a plasma, which etches features through the silicon containing mask layer with a second critical dimension, which is less than half a first critical dimension, forming a pattern in the silicon containing mask layer;transferring the pattern of the silicon containing mask layer to an organic underlayer disposed below the silicon containing mask layer; andtransferring a pattern from the organic underlayer to the etch layer, wherein the forming a plasma uses a bias between 0 to 100 volts. |
