| 发明名称 | Nonvolatile memory device with upper source plane and buried bit line | ||
| 摘要 | A nonvolatile memory device includes: a channel layer extending in a vertical direction from a substrate; a plurality of interlayer dielectric layers and word lines alternately stacked along the channel layer over the substrate; a bit line formed under plurality of interlayer dielectric layers and word lines, coupled to the channel layer, and extending in a direction crossing the word lines; and a common source layer coupled to the channel layer and formed over the plurality of interlayer dielectric layers and word lines. | ||
| 申请公布号 | US9000510(B2) | 申请公布日期 | 2015.04.07 |
| 申请号 | US201213608652 | 申请日期 | 2012.09.10 |
| 申请人 | SK Hynix Inc. | 发明人 | Hong Young-Ok |
| 分类号 | H01L29/792;H01L27/115 | 主分类号 | H01L29/792 |
| 代理机构 | IP&T Group LLP | 代理人 | IP&T Group LLP |
| 主权项 | 1. A nonvolatile memory device comprising: a channel layer extending in a vertical direction from a substrate; a plurality of interlayer dielectric layers and word lines alternately stacked along the channel layer over the substrate; a bit line formed under a plurality of interlayer dielectric layers and word lines, coupled to the channel layer, and extending in a direction crossing the word lines; and a common source layer coupled to the channel layer and formed over the plurality of interlayer dielectric layers and word lines, wherein the common source layer is divided into unit blocks by slits which are filled with an insulation layer. | ||
| 地址 | Gyeonggi-do KR | ||