| 摘要 |
<p>Provided in the present invention are a semiconductor memory device which comprises a memory cell array in which data is stored; surrounding circuits formed to perform a program checking operation, lead operation, and removal checking operation of the memory cell array; and a control circuit formed to control the surrounding circuits, wherein the control circuit controls the surrounding circuits to set bit line voltage of the program checking operation higher than the bit line voltage of the lead operation, and to set the bit line voltage of the removal checking operation lower than the bit line voltage of the lead operation, and a method for operating the same.</p> |
