发明名称 METHOD AND SYSTEM FOR DETECTING CRITICAL DEFECTS
摘要 A system and method for evaluating a criticality of a defect. The method may include: obtaining information indicative of at least one spatial relationship between at least one inspected pattern of a layer of a micro-electronic device and an inspected defect; and determining a criticality of the detected defect in response to the obtained information and in response to at least one rule that associates between a criticality of a defect and a spatial relationship between the defect and at least one edge of at least one pattern of a layer of a micro-electronic device.
申请公布号 US2009273669(A1) 申请公布日期 2009.11.05
申请号 US20090432780 申请日期 2009.04.30
申请人 WERTSMAN NADAV;LEV MICHAEL 发明人 WERTSMAN NADAV;LEV MICHAEL
分类号 G06K9/00;H04N7/18 主分类号 G06K9/00
代理机构 代理人
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