发明名称 |
METHOD AND SYSTEM FOR DETECTING CRITICAL DEFECTS |
摘要 |
A system and method for evaluating a criticality of a defect. The method may include: obtaining information indicative of at least one spatial relationship between at least one inspected pattern of a layer of a micro-electronic device and an inspected defect; and determining a criticality of the detected defect in response to the obtained information and in response to at least one rule that associates between a criticality of a defect and a spatial relationship between the defect and at least one edge of at least one pattern of a layer of a micro-electronic device.
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申请公布号 |
US2009273669(A1) |
申请公布日期 |
2009.11.05 |
申请号 |
US20090432780 |
申请日期 |
2009.04.30 |
申请人 |
WERTSMAN NADAV;LEV MICHAEL |
发明人 |
WERTSMAN NADAV;LEV MICHAEL |
分类号 |
G06K9/00;H04N7/18 |
主分类号 |
G06K9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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