| 发明名称 |
Materials with Tunable Properties and Memory Devices and Methods of Making Same Using Random Nanowire or Nanotube Networks |
| 摘要 |
A device comprising a first electrode; a second electrode; and an active material positioned between the first and second electrode, wherein the active material comprises a plurality of randomly positioned conducting wires coated with a nanoscale switchable dielectric layer, said conducting wires are adapted to provide a conducting path or paths when a voltage is applied by one of the electrodes or between said electrodes. |
| 申请公布号 |
US2015090953(A1) |
申请公布日期 |
2015.04.02 |
| 申请号 |
US201314398642 |
申请日期 |
2013.05.03 |
| 申请人 |
The Provost, Fellows, Foundation Scholars, and Other Members of Board, of the College of the Holy |
发明人 |
Boland John;Coleman Jonathon;Ferriera Mauro |
| 分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A device comprising:
a first electrode; a second electrode; an active material positioned between the first and second electrode, wherein the active material comprises a plurality of randomly positioned conducting wires coated with a nanoscale surface passivation layer , said conducting wires are adapted to provide a conducting path or paths when a voltage is applied by one of the electrodes or between said electrodes; and wherein the conductivity of the paths can be controlled by application of the applied voltage. |
| 地址 |
Dublin IE |
