Metal Redistribution Layer for Molded Substrates

摘要

Integrated circuits are packaged by placing a plurality of semiconductor dies on a support substrate, each one of the semiconductor dies having a plurality of terminals at a side facing the support substrate and covering the semiconductor dies with a molding compound to form a molded structure. The support substrate is then removed from the molded structure to expose the side of the semiconductor dies with the terminals, and a metal redistribution layer is formed on the molded structure and in direct contact with the terminals of the semiconductor dies and the molding compound. The redistribution layer is formed without first forming a dielectric layer on a side of the molded structure with the terminals of the semiconductor dies. A corresponding molded substrate and individual molded semiconductor packages are also disclosed.

主权项

1. A method of packaging integrated circuits, the method comprising:
placing a plurality of semiconductor dies on a support substrate, each one of the semiconductor dies having a plurality of terminals at a side facing the support substrate; covering the semiconductor dies with a molding compound to form a molded structure; removing the support substrate from the molded structure to expose the side of the semiconductor dies with the terminals; and forming a metal redistribution layer on the molded structure and in direct contact with the terminals of the semiconductor dies and the molding compound, without first forming a dielectric layer on a side of the molded structure with the terminals of the semiconductor dies.