INTERCONNECTS WITH FULLY CLAD LINES

摘要

A metallization layer including a fully clad interconnect and a method of forming a fully clad interconnect. An opening is formed in a dielectric layer, wherein the dielectric layer has a surface and the opening includes walls and a bottom. A diffusion barrier layer and an adhesion layer are deposited on the dielectric layer. An interconnect material is deposited on the dielectric layer and reflowed into the opening forming an interconnect. An adhesion capping layer and diffusion barrier capping layer are deposited over the interconnect. The interconnect is surrounded by the adhesion layer and the adhesion capping layer and the adhesion layer and the adhesion capping layer are surrounded by the diffusion barrier layer and the diffusion capping layer.

主权项

1. A method of forming a fully clad interconnect, comprising:
forming an opening in a dielectric layer, wherein said dielectric layer has a surface and said opening includes walls and a bottom; depositing a diffusion barrier layer on said dielectric layer surface, said walls and said bottom; depositing an adhesion layer on said diffusion barrier layer; depositing interconnect material on said adhesion layer; reflowing said interconnect material into said opening forming an interconnect in said opening, wherein said interconnect is recessed below said dielectric layer surface; depositing an adhesion capping layer over said interconnect; and depositing a diffusion barrier capping layer over said adhesion capping layer, wherein said interconnect is surrounded by said adhesion layer and said adhesion capping layer, and said adhesion layer and said adhesion capping layer are surrounded by said diffusion barrier layer and said diffusion barrier capping layer.