发明名称 |
Substrate Processing Apparatus, Method of Manufacturing Semiconductor Device and Non-Transitory Computer-Readable Recording Medium |
摘要 |
Generation of byproducts is inhibited in a buffer space even in a single-wafer-type apparatus using the buffer space. A method of manufacturing a semiconductor device includes (a) loading a substrate into a process chamber; (b) supplying a first-element-containing gas via a buffer chamber of a shower head to the substrate placed in the process chamber; (c) supplying a second-element-containing gas to the substrate via the buffer chamber; and (d) performing an exhaust process between (b) and (c), wherein (d) includes: exhausting an atmosphere of the buffer chamber; and exhausting an atmosphere of the process chamber after exhausting the atmosphere of the buffer chamber. |
申请公布号 |
US2015093916(A1) |
申请公布日期 |
2015.04.02 |
申请号 |
US201414498023 |
申请日期 |
2014.09.26 |
申请人 |
Hitachi Kokusai Electric Inc. |
发明人 |
YAMAMOTO Tetsuo;MORIMITSU Kazuhiro;TOYODA Kazuyuki;ONO Kenji;TAKASAKI Tadashi;HIROSE Ikuo;SASAKI Takafumi |
分类号 |
C23C16/455;C23C16/44;H01L21/02;C23C16/52 |
主分类号 |
C23C16/455 |
代理机构 |
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代理人 |
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主权项 |
1. A substrate processing apparatus comprising:
a process chamber configured to process a substrate; a shower head including a buffer chamber; a first exhaust system configured to exhaust an atmosphere of the buffer chamber; a first-element-containing gas supply system configured to supply a first-element-containing gas to the substrate via the buffer chamber; a second-element-containing gas supply system configured to supply a second-element-containing gas to the substrate via the buffer chamber; a second exhaust system configured to exhaust an atmosphere of the process chamber; and a control unit configured to control the first exhaust system, the first-element-containing gas supply system, the second-element-containing gas supply system and the second exhaust system to perform: (a) loading the substrate into the process chamber; (b) supplying the first-element-containing gas via the buffer chamber of the shower head to the substrate placed in the process chamber; (c) supplying the second-element-containing gas to the substrate via the buffer chamber, and (d) performing an exhaust process between (b) and (c), wherein (d) includes a buffer chamber exhaust process of exhausting the atmosphere of the buffer chamber using the first exhaust system and a process chamber exhaust process of exhausting the atmosphere of the process chamber using the second exhaust system after the buffer chamber exhaust process. |
地址 |
Tokyo JP |