发明名称 Substrate Processing Apparatus, Method of Manufacturing Semiconductor Device and Non-Transitory Computer-Readable Recording Medium
摘要 Generation of byproducts is inhibited in a buffer space even in a single-wafer-type apparatus using the buffer space. A method of manufacturing a semiconductor device includes (a) loading a substrate into a process chamber; (b) supplying a first-element-containing gas via a buffer chamber of a shower head to the substrate placed in the process chamber; (c) supplying a second-element-containing gas to the substrate via the buffer chamber; and (d) performing an exhaust process between (b) and (c), wherein (d) includes: exhausting an atmosphere of the buffer chamber; and exhausting an atmosphere of the process chamber after exhausting the atmosphere of the buffer chamber.
申请公布号 US2015093916(A1) 申请公布日期 2015.04.02
申请号 US201414498023 申请日期 2014.09.26
申请人 Hitachi Kokusai Electric Inc. 发明人 YAMAMOTO Tetsuo;MORIMITSU Kazuhiro;TOYODA Kazuyuki;ONO Kenji;TAKASAKI Tadashi;HIROSE Ikuo;SASAKI Takafumi
分类号 C23C16/455;C23C16/44;H01L21/02;C23C16/52 主分类号 C23C16/455
代理机构 代理人
主权项 1. A substrate processing apparatus comprising: a process chamber configured to process a substrate; a shower head including a buffer chamber; a first exhaust system configured to exhaust an atmosphere of the buffer chamber; a first-element-containing gas supply system configured to supply a first-element-containing gas to the substrate via the buffer chamber; a second-element-containing gas supply system configured to supply a second-element-containing gas to the substrate via the buffer chamber; a second exhaust system configured to exhaust an atmosphere of the process chamber; and a control unit configured to control the first exhaust system, the first-element-containing gas supply system, the second-element-containing gas supply system and the second exhaust system to perform: (a) loading the substrate into the process chamber; (b) supplying the first-element-containing gas via the buffer chamber of the shower head to the substrate placed in the process chamber; (c) supplying the second-element-containing gas to the substrate via the buffer chamber, and (d) performing an exhaust process between (b) and (c), wherein (d) includes a buffer chamber exhaust process of exhausting the atmosphere of the buffer chamber using the first exhaust system and a process chamber exhaust process of exhausting the atmosphere of the process chamber using the second exhaust system after the buffer chamber exhaust process.
地址 Tokyo JP