| 摘要 |
Highly pure In having a purity of 7N (99.99999%) or more with not more than 0.05 ppm Pb, not more than 0.005 ppm Zn, and not more than 0.02 ppm S. A method for manufacturing highly pure In characterized in that when electrolytically purifying 5N (99.999%) In, SrCO3 is added to the electrolytic solution to reduce Pb, Zn and S and increase the purity to 7N (99.99999%) or more. There is a possibility that the demand for LED In such as InGaN or AlInGaP will increase and it will be necessary to manufacture In inexpensively and in large quantities in the future. The present invention provides a technology that is capable of meeting such a need. |
