气体阻障膜积层体及使用其的电子零件;GAS BARRIER FILM LAYERED PRODUCT AND ELECTRONIC COMPONENT HAVING THE SAME

摘要

本申请案发明可获得一种气体阻障膜积层体，所述气体阻障膜积层体于藉由电浆CVD法来形成气体阻障膜时，保持可挠性并且缓和残留应力而减小卷曲，并且具有充分的气体阻障性。本申请案的气体阻障膜积层体具备：成为基材的树脂膜11；以及位于树脂膜11的至少单面上的至少一个有机膜层12及至少一个气体阻障膜层13。气体阻障膜层13为藉由电浆CVD法来制膜、以金属氧化物作为主成分的含有有机成分的膜。; and at least one organic film layer 12 disposed on at least one surface of the resin film 11, and at least one gas barrier film layer 13. The gas barrier film layer 13 is a film including organic constituents which is produced by the plasma CVD method and has a metal oxide as a main constituent.