| 摘要 |
<p>In conventional power semiconductor devices which perform high-speed switching, there have been some cases wherein, due to a displacement current that flows when the switching is performed, a high voltage is generated with the resistance of the flow channel of the displacement current, and due to the voltage, a thin insulating film, such as a gate insulating film, is broken down, and the semiconductor device is broken. Disclosed is a power semiconductor device which is provided with: a first conductivity type semiconductor substrate; a first conductivity type drift layer formed on the first main surface of the semiconductor substrate; a second conductivity type second well region formed to surround the first well region of the drift layer; a field insulating film formed on a second well region portion on the opposite side to the first well region; and a source pad that electrically connects together the second well region and a source region via a well contact hole, which is provided by penetrating the gate insulating film formed on a second well region portion on the first well region side. The distance between the well contact hole and the boundary between the gate insulating film and the field insulating film is set at a predetermined value or less.</p> |
