| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that can realize low-voltage operation and low-power consumption of a non-volatile memory having a gate electrode with a stack structure. <P>SOLUTION: A first conductive film is formed on an element isolation insulating film. A first insulating film is formed on an element region. A second conductive film is formed on the first insulating film and on the element isolation insulating film on which the first conductive film is formed. The second conductive film and the first conductive film are patterned to form a floating gate in which a first part formed by the second conductive film is located on the element region, and in which a second part formed by a lamination layer film of the first and second conductive films is located on the element isolation insulating film. A second insulating film is formed on the floating gate. A control gate is formed on the second insulating film. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
