| 发明名称 | Stacked carbon-based FETs | ||
| 摘要 | Stacked transistor devices include a lower channel layer formed on a substrate; a pair of vertically aligned source regions formed over the lower channel layer, where the pair of source regions are separated by an insulator; a pair of vertically aligned drain regions formed on the lower channel layer, where the pair of drain regions are separated by an insulator; a pair of vertically aligned gate regions formed on the lower gate dielectric layer; and an upper channel layer formed over the source regions, drain regions, and gate regions. | ||
| 申请公布号 | US8994080(B2) | 申请公布日期 | 2015.03.31 |
| 申请号 | US201313968101 | 申请日期 | 2013.08.15 |
| 申请人 | International Business Machines Corporation | 发明人 | Guo Dechao;Han Shu-Jen;Lu Yu;Wong Keith Kwong Hon |
| 分类号 | H01L21/8238;H01L29/16;H01L21/8234;H01L29/78 | 主分类号 | H01L21/8238 |
| 代理机构 | Tutunjian & Bitetto, P.C. | 代理人 | Tutunjian & Bitetto, P.C. ;Alexanian Vazken |
| 主权项 | 1. A stacked transistor device, comprising: a lower channel layer formed on a substrate; a pair of vertically aligned source regions formed directly over the lower channel layer, said pair of source regions being separated by an insulator; a pair of vertically aligned drain regions formed directly over the lower channel layer, said pair of drain regions being separated by an insulator; conductive source and drain extensions, each formed in the substrate in electrical contact with a respective lower source and drain region; a pair of vertically aligned gate regions formed on the lower gate dielectric layer; and an upper channel layer formed over the source regions, drain regions, and gate regions. | ||
| 地址 | Armonk NY US | ||