发明名称 |
Magnetic memory |
摘要 |
A magnetic memory according to an embodiment includes: a magnetic layer including a plurality of magnetic domains and a plurality of domain walls, and extending in a direction; a pinning layer formed with nonmagnetic phases and magnetic phases, extending in an extending direction of the magnetic layer and being located adjacent to the magnetic layer; an electrode layer located on the opposite side of the pinning layer from the magnetic layer; an insulating layer located between the pinning layer and the electrode layer; a current introducing unit flowing a shift current to the magnetic layer, the shift current causing the domain walls to shift; a write unit writing information into the magnetic layer; a read unit reading information from the magnetic layer; and a voltage generating unit generating a voltage to be applied between the pinning layer and the electrode layer. |
申请公布号 |
US8995163(B2) |
申请公布日期 |
2015.03.31 |
申请号 |
US201313761637 |
申请日期 |
2013.02.07 |
申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
Nakamura Shiho;Morise Hirofumi;Kondo Tsuyoshi |
分类号 |
G11C19/00;G11C11/16;G11C11/14 |
主分类号 |
G11C19/00 |
代理机构 |
Oblon, McClelland, Maier & Neustadt, L.L.P. |
代理人 |
Oblon, McClelland, Maier & Neustadt, L.L.P. |
主权项 |
1. A magnetic memory comprising:
a magnetic layer including a plurality of magnetic domains and a plurality of domain walls separating the magnetic domains from one another, the magnetic layer extending in a direction; a pinning layer formed with nonmagnetic phases and magnetic phases, the pinning layer extending in an extending direction of the magnetic layer and being located adjacent to the magnetic layer; an electrode layer located on the opposite side of the pinning layer from the magnetic layer; an insulating layer located between the pinning layer and the electrode layer; a current introducing unit configured to flow a shift current to the magnetic layer, the shift current causing the domain walls to shift; a write unit configured to write information into the magnetic layer; a read unit configured to read information from the magnetic layer; and a voltage generating unit configured to generate a voltage to be applied between the pinning layer and the electrode layer. |
地址 |
Tokyo JP |