Thin-film transistor and method for manufacturing thin-film transistor

摘要

A method for manufacturing a thin-film transistor, includes: preparing a substrate; forming a gate electrode above the substrate; forming a gate insulating layer above the gate electrode; forming a semiconductor film above the gate insulating layer; forming, above the semiconductor film, a protective layer comprising an organic material; forming a source electrode and a drain electrode above the protective layer; forming a semiconductor layer patterned, by performing dry etching on the semiconductor film; removing at least a portion of a region of an altered layer, the region contacting the semiconductor layer, the altered layer being a surface layer of the protective layer that is altered by the dry etching; and forming a passivation layer having a major component identical to a major component of the protective layer so as to contact the semiconductor layer in a region in which the altered layer has been removed.

主权项

1. A method for manufacturing a thin-film transistor, the method comprising:
preparing a substrate; forming a gate electrode above the substrate; forming a gate insulating layer above the gate electrode; forming a semiconductor film above the gate insulating layer; forming, above the semiconductor film, an etch-stopper layer comprising an organic material; forming a source electrode and a drain electrode that are opposed to each other, each of the source electrode and the drain electrode having at least a portion located above the etch-stopper layer; forming a semiconductor layer patterned, by performing dry etching on the semiconductor film; removing at least a portion of a region of an altered layer, the region contacting the semiconductor layer, the altered layer being a surface layer of the etch-stopper layer that is (i) exposed from the source electrode and the drain electrode and (ii) altered by the dry etching; and forming a passivation layer so as to contact the semiconductor layer in a region in which the altered layer has been removed, the passivation layer having a major component identical to a major component of the etch-stopper layer.