发明名称 Semiconductor integrated circuit
摘要 A semiconductor device includes NAND gates and switches to form a circuit to hold data, and a capacitor electrically connected to the circuit via a transistor to store the data held in the circuit. The transistor has a channel formation region including an oxide semiconductor.
申请公布号 US8995174(B2) 申请公布日期 2015.03.31
申请号 US201314037450 申请日期 2013.09.26
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 Koyama Jun
分类号 G11C11/24;G11C7/10;G11C5/14;G11C8/00;H03K19/00;G11C8/04;H03K3/012;H03K3/037;H01L21/8258;H01L27/088;H01L29/786;H01L27/12;H01L21/8234 主分类号 G11C11/24
代理机构 Fish & Richardson P.C. 代理人 Fish & Richardson P.C.
主权项 1. A semiconductor device comprising: a first NAND gate comprising a first input terminal, a second input terminal, and an output terminal; a second NAND gate comprising a first input terminal, a second input terminal, and an output terminal; a switch comprising a first terminal and a second terminal; a transistor comprising a first terminal, a second terminal, and a gate; and a capacitor comprising a first terminal and a second terminal, wherein the output terminal of the first NAND gate is electrically connected to the first terminal of the switch, wherein the second terminal of the switch is electrically connected to the first input terminal of the second NAND gate, wherein the output terminal of the second NAND gate is electrically connected to the first input terminal of the first NAND gate and the first terminal of the transistor, wherein the second terminal of the transistor is electrically connected to the first terminal of the capacitor, and wherein the transistor comprises a channel formation region comprising an oxide semiconductor.
地址 Atsugi-shi, Kanagawa-ken JP
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