System and method for directional grinding on backside of a semiconductor wafer

摘要

A semiconductor device includes a backing plate, a semiconductor wafer, and integrated devices. The semiconductor wafer includes a plurality of semiconductor die having edges oriented along a reference line, a front surface facing the backing plate, and a backside surface. The backside surface is formed opposite the front surface and includes linear grind marks oriented along the reference line and diagonal with respect to the edges of the plurality of semiconductor die. The linear grind marks are formed by a linear motion of an abrasive surface, such as by a cylinder or wheel having an abrasive surface, and in one embodiment are oriented at 45 degrees with respect to the reference line. The linear grind marks increase a strength of the plurality of semiconductor die to resist cracking. Integrated devices are formed on the front surface of the semiconductor wafer.

主权项

1. A semiconductor device, comprising:
a semiconductor wafer including,
(a) a plurality of semiconductor die comprising edges oriented along a reference line,(b) radial grind marks formed on a first surface of the semiconductor wafer to a first depth,(c) linear grind marks formed on the first surface of the semiconductor wafer at an angle to the reference line to a second depth, and(d) a semiconductor circuit formed on a second surface of the semiconductor wafer opposite the first surface of the semiconductor wafer.