| 摘要 |
[Problems to be Solved] To provide a photoelectric conversion device that includes a buffer layer capable of uniformly covering an under layer and has high in-plane uniformity of photoelectric conversion efficiency. [Means for Solving the Problems] The photoelectric conversion device of the present invention is a photoelectric conversion device 1 which includes a substrate (10) on which the following are layered in the order listed below: a lower electrode layer (20); a photoelectric conversion semiconductor layer (30) which includes, as a major component, at least one kind of compound semiconductor having a chalcopyrite structure formed of a group Ib element, a group IIIb element, and a group VIb element; a buffer layer (40); and a transparent conductive layer (50), in which a carbonyl ion (C) is provided on a surface (40 s ) of the buffer layer (40) on the side of the transparent conductive layer (50) and the buffer layer (40) is a thin film layer having an average film thickness of 10nm to 70nm and includes a ternary compound of a cadmium-free metal, oxygen, and sulfur. |
