| 发明名称 |
MEMORY CELL WITH INDEPENDENTLY-SIZED ELECTRODE |
| 摘要 |
Memory cell architectures and methods of forming the same are provided. An example memory cell can include a switch element and a memory element. A middle electrode is formed between the memory element and the switch element. An outside electrode is formed adjacent the switch element or the memory element at a location other than between the memory element and the switch element. A lateral dimension of the middle electrode is different than a lateral dimension of the outside electrode. |
| 申请公布号 |
US2015084156(A1) |
申请公布日期 |
2015.03.26 |
| 申请号 |
US201314036788 |
申请日期 |
2013.09.25 |
| 申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
Ravasio Marcello;Sciarrillo Samuele;Gotti Andrea |
| 分类号 |
H01L27/105;H01L21/28 |
主分类号 |
H01L27/105 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A memory cell, comprising:
a switch element; a memory element; a middle electrode formed between the memory element and the switch element; and an outside electrode formed adjacent the switch element or the memory element at a location other than between the memory element and the switch element, wherein a lateral dimension of the middle electrode is different than a lateral dimension of the outside electrode. |
| 地址 |
Boise ID US |
