| 发明名称 |
SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS |
| 摘要 |
A solid-state imaging device includes: a pixel region in which a plurality of pixels composed of a photoelectric conversion section and a pixel transistor is arranged; an on-chip color filter; an on-chip microlens; and a multilayer interconnection layer in which a plurality of layers of interconnections is formed through an interlayer insulating film. The solid-state imaging device further includes a light-shielding film formed through an insulating layer in a pixel boundary of a light receiving surface in which the photoelectric conversion section is arranged. |
| 申请公布号 |
US2015085168(A1) |
申请公布日期 |
2015.03.26 |
| 申请号 |
US201414563036 |
申请日期 |
2014.12.08 |
| 申请人 |
Sony Corporation |
发明人 |
Watanabe Kazufumi;Maruyama Yasushi |
| 分类号 |
H01L27/146;H04N5/359 |
主分类号 |
H01L27/146 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A solid-state imaging device comprising:
a pixel region in which a plurality of pixels composed of a photoelectric conversion section and a pixel transistor is arranged; an on-chip color filter; an on-chip microlens; a multilayer interconnection layer in which a plurality of layers of interconnections is formed through an interlayer insulating film; and a light-shielding film formed through an insulating layer in a pixel boundary of a light receiving surface in which the photoelectric conversion section is arranged. |
| 地址 |
Tokyo JP |
