Power semiconductor device

摘要

A power semiconductor device of an embodiment comprises: a substrate including an element isolation region and an active region; an epitaxial layer disposed on the active region of the substrate; a passivation layer disposed on the element isolation region of the substrate and the epitaxial layer; a gate electrode disposed on the epitaxial layer as passing through the passivation layer; and a source contact and a drain contact contacting with the epitaxial layer by passing through the passivation layer, and disposed apart from the gate electrode.