| 摘要 |
FIELD: metallurgy.SUBSTANCE: invention refers to metallurgy and can be used in electron-beam melting of conducting metal material. Device includes vacuum chamber with sole, at least one ion plasma electron emitter that can generate first electron field with a first coverage area, and auxiliary ion plasma electron emitter positioned in the vacuum chamber or adjoining it and capable of generation of a second electron field with a second coverage area and sufficient energy to heat a part of conductive metal material to its melting point, to melting point of solid condensate inside the conductive metal material, and heat feed to the areas of ingot formed. Auxiliary ion plasma electron emitter can focus second electron filed so that the second coverage area is less than the first coverage area, and orienting device can orient the second electron field towards one of conductive metal material, solid condensate and ingot formed.EFFECT: application of ion plasma emitter to direct extended non-linear electron field towards the surface of the said remelted materials.40 cl, 15 dwg |
