| 摘要 |
[Problem] To provide a back surface irradiation type solid-state imaging device which achieves the increase of the stored charge amount of a photodiode and the simplification of read paths of stacked photodiodes. [Solution] The stored charge amount and sensitivity are increased by causing a photodiode of a back surface irradiation type solid-state imaging device to have a storage gate structure. Further, by providing a barrier region that separates the photodiode in an incident light direction and controlling the barrier height of the barrier region by pulse voltage to be applied to a storage gate, the transfer of a signal charge between stacked photodiodes separated in an incidence direction is controlled, and thereby reading from the stacked photodiodes is simplified. This structure makes it possible to implement a global shutter without lowering the integration degree and change the spectral sensitivity characteristic of the photodiode and improve S/N without using a color filter. |
