| 发明名称 |
LIGHT-EMITTING ELEMENT HAVING A PLURALITY OF LIGHT-EMITTING STRUCTURES |
| 摘要 |
A light-emitting element comprises a first semiconductor layer, a first light-emitting structure and a second light-emitting structure on the first semiconductor layer, a first electrode on the first semiconductor layer, a second electrode on the first light-emitting structure, and a first trench between the first light-emitting structure and the second light-emitting structure, exposing the first semiconductor layer, wherein the first trench is devoid of the first electrode and the second electrode formed therein. |
| 申请公布号 |
US2015076536(A1) |
申请公布日期 |
2015.03.19 |
| 申请号 |
US201414470396 |
申请日期 |
2014.08.27 |
| 申请人 |
Epistar Corporation |
发明人 |
OU Chen;CHANG Chun-Wei;WU Chih-Wei;WANG Sheng-Chih;TSAI Hsin-Mei;TSAI Chia-Chen;CHANG Chuan-Cheng |
| 分类号 |
H01L27/15;H01L33/42;H01L33/20;H01L33/38 |
主分类号 |
H01L27/15 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A light-emitting device, comprising:
a first semiconductor layer; a first light-emitting structure and a second light-emitting structure formed on the first semiconductor layer; a first electrode formed on the first semiconductor layer; a second electrode formed on the first light-emitting structure; and a first trench formed between the first light-emitting structure and the second light-emitting structure, exposing the first semiconductor layer, wherein the first trench is devoid of the first electrode and the second electrode formed therein. |
| 地址 |
Hsinchu TW |
