发明名称 DUAL-TARGET SPUTTER DEPOSITION WITH CONTROLLED PHASE DIFFERENCE BETWEEN TARGET POWERS
摘要 System and method of insulating film deposition. A sputter deposition chamber comprises a pair of targets made of the same insulating material. Each target is applied with a high frequency power signal concurrently. A phase adjusting unit is used to adjust the phase difference between the high frequency power signals supplied to the pair of targets to a predetermined value, thereby improving the in-plane thickness distribution of a resultant film. The predetermined value is target material specific.
申请公布号 US2015075971(A1) 申请公布日期 2015.03.19
申请号 US201414490410 申请日期 2014.09.18
申请人 TOKYO ELECTRON LIMITED 发明人 FURUKAWA Shinji;WATANABE Naoki;MIKI Hiroshi;KITADA Tooru;KOJIMA Yasuhiko
分类号 H01J37/34;C23C14/34 主分类号 H01J37/34
代理机构 代理人
主权项 1. A physical vapor deposition apparatus comprising: a first sputter target coupled to a first high frequency (HF) power signal; a second sputter target coupled to a second HF power signal, wherein the first HF power signal and the second HF power signal are concurrently applied to said first sputter target and said second sputter target respectively; and a phase adjuster coupled to said first HF power signal and said second HF power signal and configured to adjust a phase difference between said first HF power signal and said second HF power signal.
地址 Tokyo JP