发明名称 |
DUAL-TARGET SPUTTER DEPOSITION WITH CONTROLLED PHASE DIFFERENCE BETWEEN TARGET POWERS |
摘要 |
System and method of insulating film deposition. A sputter deposition chamber comprises a pair of targets made of the same insulating material. Each target is applied with a high frequency power signal concurrently. A phase adjusting unit is used to adjust the phase difference between the high frequency power signals supplied to the pair of targets to a predetermined value, thereby improving the in-plane thickness distribution of a resultant film. The predetermined value is target material specific. |
申请公布号 |
US2015075971(A1) |
申请公布日期 |
2015.03.19 |
申请号 |
US201414490410 |
申请日期 |
2014.09.18 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
FURUKAWA Shinji;WATANABE Naoki;MIKI Hiroshi;KITADA Tooru;KOJIMA Yasuhiko |
分类号 |
H01J37/34;C23C14/34 |
主分类号 |
H01J37/34 |
代理机构 |
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代理人 |
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主权项 |
1. A physical vapor deposition apparatus comprising:
a first sputter target coupled to a first high frequency (HF) power signal; a second sputter target coupled to a second HF power signal, wherein the first HF power signal and the second HF power signal are concurrently applied to said first sputter target and said second sputter target respectively; and a phase adjuster coupled to said first HF power signal and said second HF power signal and configured to adjust a phase difference between said first HF power signal and said second HF power signal. |
地址 |
Tokyo JP |