发明名称 SEMICONDUCTOR MEMORY DEVICE HAVING PADS
摘要 A semiconductor memory device includes a semiconductor circuit substrate having a chip pad forming region. A pair of data lines are formed on the semiconductor circuit substrate at one side of the chip pad region. The pair of data lines extend along a direction that the chip pad region of the semiconductor circuit substrate extends. The pair of data lines are arranged to be adjacent to each other and receive a pair of differential data signals. A power supply line is formed on the semiconductor circuit substrate at the other side of the chip pad region. The power supply line extends along the direction that the chip pad region of the semiconductor circuit substrate extends, and the power supply line receives power.
申请公布号 US2015076614(A1) 申请公布日期 2015.03.19
申请号 US201414550328 申请日期 2014.11.21
申请人 SK hynix Inc. 发明人 PARK Chang Kun;SONG Seong Hwi;KIM Yong Ju;HAN Sung Woo;SONG Hee Woong;OH Ic Su;KIM Hyung Soo;HWANG Tae Jin;CHOI Hae Rang;LEE Ji Wang;JANG Jae Min
分类号 H01L23/00;H01L27/105 主分类号 H01L23/00
代理机构 代理人
主权项 1. A semiconductor memory device, comprising: a semiconductor circuit substrate; and a chip pad region included in the semiconductor circuit substrate, the chip pad region comprising a plurality of pads, wherein the pads include: a first differential signal data pad that is electrically connected to a first circuit unit that comprises a first pull up circuit unit and a first pull down circuit unit;a second differential signal data pad electrically connected to a second circuit unit that comprises a second pull up circuit unit and a second pull down circuit unit; anda power pad interposed between the first and second differential signal data pads and electrically connected to each of the first and second circuit units.
地址 Icheon-si KR