发明名称 MASK PATTERN TRANSFER METHOD
摘要 PROBLEM TO BE SOLVED: To provide a mask pattern transfer method capable of improving exposure tolerance, in a transfer method of reducing and transferring a mask pattern included in a photomask on a wafer by liquid immersion exposure through a modified illumination using a pupil filter.SOLUTION: A binary-type photomask includes an intermediate layer with a refractive index of 0.2-3 and extinction coefficient of 0-3, and a thin layer configured with a transparent layer, on one principal surface of a transparent substrate, and a light-shielding film disposed on the thin layer forms a mask pattern. Using the binary-type photomask, the exposure light reflected at the mask pattern, of exposure light incident on the photomask, is re-reflected at the intermediate layer and intervened with the exposure light not reflected at the mask pattern, so that optical intensity of the exposure light emitted from the photomask is improved.
申请公布号 JP2015052802(A) 申请公布日期 2015.03.19
申请号 JP20140231890 申请日期 2014.11.14
申请人 DAINIPPON PRINTING CO LTD 发明人 WATANABE KOJI;HAYANO KATSUYA;MESHIDA TAKASHI;TSUJIMOTO EIJI;KOKUBO HARUO;TAKAMIZAWA HIDEYOSHI
分类号 G03F1/50;H01L21/027 主分类号 G03F1/50
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