| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device capable of accurately executing a write operation for writing data to a memory cell.SOLUTION: A nonvolatile semiconductor storage device according to one embodiment includes: a memory cell array configured so that NAND strings including memory strings each of which is a plurality of memory cells connected in series are arranged in an array; a plurality of word lines each connected to control gate electrodes of the plurality of memory cells; a plurality of bit lines each connected to a first end of one of the NAND strings; and a control circuit executing a write verify operation by applying a verify voltage to a selected word line, applying a read pass voltage to unselected word lines for making continuous unselected memory cells irrespective of cell data, and applying a bit line voltage of a predetermined value to a selected bit line. The control circuit is configured to be able to change a voltage value of the bit line voltage or the read pass voltage depending on a position of the selected word line in the NAND strings. |
