METHODS OF FORMING SEMICONDUCTOR DEVICE STRUCTURES, AND RELATED SEMICONDUCTOR DEVICE STRUCTURES

摘要

A method of forming a semiconductor device structure. The method comprises forming a block copolymer assembly comprising at least two different domains over an electrode. At least one metal precursor is selectively coupled to the block copolymer assembly to form a metal-complexed block copolymer assembly comprising at least one metal-complexed domain and at least one non-metal-complexed domain. The metal-complexed block copolymer assembly is annealed in to form at least one metal structure. Other methods of forming a semiconductor device structures are described. Semiconductor device structures are also described.

主权项

1. A method of forming a semiconductor device structure, comprising:
forming a polymer material over an electrode; removing a portion of the polymer material to form a polymer pattern comprising at least one polymer structure and at least one opening; exposing the polymer pattern to a staining agent to form a metal-complexed polymer pattern comprising at least one metal-complexed polymer structure; and treating the metal-complexed polymer pattern to form at least one metal structure.