Semiconductor Device and Fabrication Method Thereof

摘要

The semiconductor device fabrication method of the present invention includes: laminating a plurality of amorphous silicon films on a semiconductor substrate, forming through-holes that pass through the plurality of amorphous silicon films, and subjecting the plurality of amorphous silicon films 301 that include the through-holes to an etching process that uses an alkaline aqueous solution; wherein the plurality of amorphous silicon films is formed to include a first amorphous silicon film and a second amorphous silicon film in which the rate of etching by using the alkaline aqueous solution is slower than that of the first amorphous silicon film and the first amorphous silicon film is interposed between the semiconductor substrate and the second amorphous silicon film.

主权项

1. A semiconductor device fabrication method comprising:
laminating a plurality of amorphous silicon films on a semiconductor substrate; forming a through-hole that passes through said plurality of amorphous silicon films; and subjecting said plurality of amorphous silicon films having said through-hole to an etching process that uses an alkaline aqueous solution; wherein: said plurality of amorphous silicon films is formed including a first amorphous silicon film and a second amorphous silicon film in which the rate of etching using said alkaline aqueous solution is slower than that of said first amorphous silicon film; and said first amorphous silicon film is interposed between said semiconductor substrate and said second amorphous silicon film.