发明名称 SEMICONDUCTOR LIGHT-EMITTING ELEMENT, LIGHT SOURCE HEAD, AND IMAGE FORMING APPARATUS
摘要 A semiconductor light-emitting element formed of a semiconductor layer includes a multilayer reflecting mirror, a light-emitting layer, a resonator, and a phase shift layer. The multilayer reflecting mirror is formed on a substrate. The light-emitting layer is formed on the multilayer reflecting mirror. The resonator uses the multilayer reflecting mirror as a lower reflecting mirror and resonates light emitted from the light-emitting layer. The phase shift layer shifts a phase of a resonance spectrum of the resonator to generate a standing wave having plural principal modes.
申请公布号 US2015077497(A1) 申请公布日期 2015.03.19
申请号 US201314028674 申请日期 2013.09.17
申请人 FUJI XEROX CO., LTD. 发明人 FUKUNAGA Hideki
分类号 H01L33/50;G03G15/04 主分类号 H01L33/50
代理机构 代理人
主权项 1. A semiconductor light-emitting element formed of a semiconductor layer, the semiconductor light-emitting element comprising: a multilayer reflecting mirror formed on a substrate; a light-emitting layer formed on the multilayer reflecting mirror; a resonator that uses the multilayer reflecting mirror as a lower reflecting mirror and that resonates light emitted from the light-emitting layer; and a phase shift layer that shifts a phase of a resonance spectrum of the resonator to generate a standing wave having a plurality of principal modes.
地址 Tokyo JP