TWO-STEP METHOD FOR JOINING A SEMICONDUCTOR TO A SUBSTRATE WITH CONNECTING MATERIAL BASED ON SILVER

摘要

The invention relates to a method for joining a semiconductor (20) to a substrate (10), comprising the following steps:•applying a first paste layer (1) of a sintering paste to the substrate;•heating and compressing the first paste layer to form a first sintered layer;•applying a second paste layer (2) of a sintering paste to the first sintered layer and arranging a semiconductor (20) on the second paste layer;•heating and compressing the second paste layer (2) to form a second sintered layer. The invention further relates to a semiconductor component produced by means of the method.