| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a trench gate type semiconductor device which has a low on-voltage and reduces gate noise by providing insulating body having a high capacity to a FP layer and an emitter electrode. <P>SOLUTION: The trench gate type semiconductor device is characterized in that adjacent first and second regions are formed between adjacent insulating gates and a third semiconductor layer in the second region is electrically connected to a first main electrode via an insulating body with a high electric capacity. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
